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MT3S111P(TE12L,F)

MT3S111P(TE12L,F) Toshiba


MT3S111P_datasheet_en_20140301-1316151.pdf Hersteller: Toshiba
RF Bipolar Transistors RF Bipolar Transistor .1A 1W
auf Bestellung 1652 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.06 EUR
31+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.89 EUR
2000+ 0.84 EUR
5000+ 0.81 EUR
Mindestbestellmenge: 26
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Technische Details MT3S111P(TE12L,F) Toshiba

Description: RF TRANS NPN 6V 8GHZ PW-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 10.5dB, Power - Max: 1W, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 6V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1.25dB @ 1GHz, Supplier Device Package: PW-MINI, Part Status: Active.

Weitere Produktangebote MT3S111P(TE12L,F)

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MT3S111P(TE12L,F) MT3S111P(TE12L,F) Hersteller : Toshiba 6docget.jsppidmt3s111plangentypedatasheet.jsppidmt3s111plangentype.pdf Trans RF BJT NPN 6V 0.1A 300mW 4-Pin(3+Tab) PW-Mini T/R
Produkt ist nicht verfügbar
MT3S111P(TE12L,F) MT3S111P(TE12L,F) Hersteller : Toshiba Semiconductor and Storage MT3S111P_datasheet_en_20140301.pdf?did=22563&prodName=MT3S111P Description: RF TRANS NPN 6V 8GHZ PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
Produkt ist nicht verfügbar
MT3S111P(TE12L,F) MT3S111P(TE12L,F) Hersteller : Toshiba Semiconductor and Storage MT3S111P_datasheet_en_20140301.pdf?did=22563&prodName=MT3S111P Description: RF TRANS NPN 6V 8GHZ PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
Produkt ist nicht verfügbar