MT3S111TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
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Technische Details MT3S111TU,LF Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM, Current - Collector (Ic) (Max): 100mA, Power - Max: 800mW, Gain: 12.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: UFM, Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz, Frequency - Transition: 10GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Voltage - Collector Emitter Breakdown (Max): 6V.
Weitere Produktangebote MT3S111TU,LF nach Preis ab 0.52 EUR bis 1.11 EUR
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MT3S111TU,LF | Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 6V 10GHZ UFM Part Status: Active Supplier Device Package: UFM Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz Frequency - Transition: 10GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Voltage - Collector Emitter Breakdown (Max): 6V Current - Collector (Ic) (Max): 100mA Power - Max: 800mW Gain: 12.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 8649 Stücke: Lieferzeit 10-14 Tag (e) |
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| MT3S111TU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 6V 10GHZ UFM
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 8649 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.11 EUR |
| 21+ | 0.85 EUR |
| 25+ | 0.76 EUR |
| 100+ | 0.65 EUR |
| 250+ | 0.59 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.52 EUR |