MT3S111TU,LF Toshiba Semiconductor and Storage

Description: RF TRANS NPN 6V 10GHZ UFM, Current - Collector (Ic) (Max): 100mA, Power - Max: 800mW, Gain: 12.5dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: UFM, Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz, Frequency - Transition: 10GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Voltage - Collector Emitter Breakdown (Max): 6V.