MT3S111TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: RF SIGE NPN BIPOLAR TRANSISTOR N
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Supplier Device Package: UFM
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.39 EUR |
| 6000+ | 0.37 EUR |
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Technische Details MT3S111TU,LF Toshiba Semiconductor and Storage
Description: RF SIGE NPN BIPOLAR TRANSISTOR N, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 12.5dB, Power - Max: 800mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 6V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz, Supplier Device Package: UFM, Part Status: Active.
Weitere Produktangebote MT3S111TU,LF nach Preis ab 0.41 EUR bis 0.97 EUR
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MT3S111TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: RF SIGE NPN BIPOLAR TRANSISTOR N Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12.5dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz Supplier Device Package: UFM Part Status: Active |
auf Bestellung 14664 Stücke: Lieferzeit 10-14 Tag (e) |
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