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MT3S113(TE85L,F)

MT3S113(TE85L,F) Toshiba Semiconductor and Storage

MT3S113_datasheet_en_20140301.pdf?did=2068&prodName=MT3S113 Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.8dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Active
auf Bestellung 2877 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.69 EUR
18+ 1.48 EUR
25+ 1.34 EUR
100+ 1.17 EUR
250+ 1.03 EUR
500+ 0.91 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 16
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Technische Details MT3S113(TE85L,F) Toshiba Semiconductor and Storage

Description: RF TRANS NPN 5.3V 12.5GHZ SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11.8dB, Power - Max: 800mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 5.3V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Frequency - Transition: 12.5GHz, Noise Figure (dB Typ @ f): 1.45dB @ 1GHz, Supplier Device Package: S-Mini, Part Status: Active.

Weitere Produktangebote MT3S113(TE85L,F) nach Preis ab 0.65 EUR bis 1.72 EUR

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Preis ohne MwSt
MT3S113(TE85L,F) MT3S113(TE85L,F) Hersteller : Toshiba MT3S113_datasheet_en_20140301-1316150.pdf RF Bipolar Transistors RF Bipolar Transistor .1A 800mW
auf Bestellung 2695 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
31+1.72 EUR
39+ 1.36 EUR
100+ 1.05 EUR
500+ 0.92 EUR
1000+ 0.73 EUR
3000+ 0.69 EUR
6000+ 0.65 EUR
Mindestbestellmenge: 31
MT3S113(TE85L,F) MT3S113(TE85L,F) Hersteller : Toshiba 18mt3s113_en_datasheet_091201.pdf Silicon-Germanium NPN Epitaxial Planar Type
Produkt ist nicht verfügbar
MT3S113(TE85L,F) MT3S113(TE85L,F) Hersteller : Toshiba Semiconductor and Storage MT3S113_datasheet_en_20140301.pdf?did=2068&prodName=MT3S113 Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.8dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 12.5GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: S-Mini
Part Status: Active
Produkt ist nicht verfügbar