auf Bestellung 2695 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.16 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.47 EUR |
| 6000+ | 0.44 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MT3S113(TE85L,F) Toshiba
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11.8dB, Power - Max: 800mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 5.3V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Frequency - Transition: 12.5GHz, Noise Figure (dB Typ @ f): 1.45dB @ 1GHz, Supplier Device Package: S-Mini, Part Status: Active.
Weitere Produktangebote MT3S113(TE85L,F) nach Preis ab 0.5 EUR bis 1.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MT3S113(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
 Description: RF TRANS NPN 5.3V 12.5GHZ SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11.8dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 5.3V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Frequency - Transition: 12.5GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Supplier Device Package: S-Mini Part Status: Active |
auf Bestellung 1617 Stücke: Lieferzeit 10-14 Tag (e) |
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MT3S113(TE85L,F) | Hersteller : Toshiba |
Silicon-Germanium NPN Epitaxial Planar Type |
Produkt ist nicht verfügbar |
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MT3S113(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11.8dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 5.3V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Frequency - Transition: 12.5GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Supplier Device Package: S-Mini Part Status: Active |
Produkt ist nicht verfügbar |