| Anzahl | Preis |
|---|---|
| 3+ | 1.16 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.47 EUR |
| 6000+ | 0.44 EUR |
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Technische Details MT3S113(TE85L,F) Toshiba
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI, Part Status: Active, Supplier Device Package: S-Mini, Noise Figure (dB Typ @ f): 1.45dB @ 1GHz, Frequency - Transition: 12.5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Voltage - Collector Emitter Breakdown (Max): 5.3V, Current - Collector (Ic) (Max): 100mA, Power - Max: 800mW, Gain: 11.8dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote MT3S113(TE85L,F) nach Preis ab 0.5 EUR bis 1.16 EUR
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MT3S113(TE85L,F) | Toshiba Semiconductor and Storage |
 Description: RF TRANS NPN 5.3V 12.5GHZ SMINIPart Status: Active Supplier Device Package: S-Mini Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Frequency - Transition: 12.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Voltage - Collector Emitter Breakdown (Max): 5.3V Current - Collector (Ic) (Max): 100mA Power - Max: 800mW Packaging: Cut Tape (CT) Gain: 11.8dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
auf Bestellung 1617 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MT3S113(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Frequency - Transition: 12.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 5.3V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Packaging: Cut Tape (CT)
Gain: 11.8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI
Part Status: Active
Supplier Device Package: S-Mini
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Frequency - Transition: 12.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 5.3V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Packaging: Cut Tape (CT)
Gain: 11.8dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 1617 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.16 EUR |
| 18+ | 1.03 EUR |
| 25+ | 0.93 EUR |
| 100+ | 0.82 EUR |
| 250+ | 0.72 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.5 EUR |