MT3S113P(TE12L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1.6W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
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Technische Details MT3S113P(TE12L,F) Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 10.5dB, Power - Max: 1.6W, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 5.3V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Frequency - Transition: 7.7GHz, Noise Figure (dB Typ @ f): 1.45dB @ 1GHz, Supplier Device Package: PW-MINI, Part Status: Active.
Weitere Produktangebote MT3S113P(TE12L,F)
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MT3S113P(TE12L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10.5dB Power - Max: 1.6W Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 5.3V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Frequency - Transition: 7.7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Supplier Device Package: PW-MINI Part Status: Active |
Produkt ist nicht verfügbar |
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MT3S113P(TE12L,F) | Hersteller : Toshiba |
RF Bipolar Transistors RF Bipolar Transistor .1A 1.6W |
Produkt ist nicht verfügbar |