MT3S113TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.27 EUR |
| 19+ | 1.13 EUR |
| 25+ | 1.01 EUR |
| 100+ | 0.89 EUR |
| 250+ | 0.77 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.55 EUR |
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Technische Details MT3S113TU,LF Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 11.2GHZ UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 12.5dB, Power - Max: 900mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 5.3V, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V, Frequency - Transition: 11.2GHz, Noise Figure (dB Typ @ f): 1.45dB @ 1GHz, Supplier Device Package: UFM.
Weitere Produktangebote MT3S113TU,LF nach Preis ab 0.6 EUR bis 1.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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MT3S113TU,LF | Toshiba |
RF Bipolar Transistors RF Bipolar Transistor .1A 900mW |
auf Bestellung 1725 Stücke: Lieferzeit 10-14 Tag (e) |
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| MT3S113TU,LF |
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Hersteller: Toshiba
RF Bipolar Transistors RF Bipolar Transistor .1A 900mW
RF Bipolar Transistors RF Bipolar Transistor .1A 900mW
auf Bestellung 1725 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.37 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.74 EUR |
| 3000+ | 0.64 EUR |
| 6000+ | 0.6 EUR |