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MT47H64M8SH-25E IT:H TR Micron


1Gb_DDR2-1282415.pdf
Hersteller: Micron
DRAM DDR2 512M 64MX8 FBGA
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Technische Details MT47H64M8SH-25E IT:H TR Micron

Description: IC DRAM 512MBIT PARALLEL 60FBGA, Operating Temperature: -40°C ~ 95°C (TC), Memory Type: Volatile, Memory Size: 512Mbit, Mounting Type: Surface Mount, Package / Case: 60-TFBGA, Packaging: Tape & Reel (TR), DigiKey Programmable: Not Verified, Memory Organization: 64M x 8, Access Time: 400 ps, Memory Interface: Parallel, Write Cycle Time - Word, Page: 15ns, Supplier Device Package: 60-FBGA (8x10), Memory Format: DRAM, Clock Frequency: 400 MHz, Technology: SDRAM - DDR2, Voltage - Supply: 1.7V ~ 1.9V.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
MT47H64M8SH-25E IT:H TR Micron Technology Inc. Description: IC DRAM 512MBIT PARALLEL 60FBGA
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 400 ps
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 60-FBGA (8x10)
Memory Format: DRAM
Clock Frequency: 400 MHz
Technology: SDRAM - DDR2
Voltage - Supply: 1.7V ~ 1.9V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT47H64M8SH-25E IT:H TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 60FBGA
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 400 ps
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 60-FBGA (8x10)
Memory Format: DRAM
Clock Frequency: 400 MHz
Technology: SDRAM - DDR2
Voltage - Supply: 1.7V ~ 1.9V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH