| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.55 EUR |
| 10+ | 20 EUR |
| 25+ | 19.35 EUR |
| 50+ | 19.1 EUR |
| 100+ | 18.39 EUR |
| 250+ | 17.8 EUR |
| 500+ | 17.39 EUR |
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Technische Details MT53E128M32D2FW-046 AAT:A Micron
Description: IC DRAM 4GBIT PAR 200TFBGA, Packaging: Box, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Grade: Automotive, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 128M x 32, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Weitere Produktangebote MT53E128M32D2FW-046 AAT:A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MT53E128M32D2FW-046 AAT:A | Micron Technology Inc. |
 Description: IC DRAM 4GBIT PAR 200TFBGAPackaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1360 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MT53E128M32D2FW-046 AAT:A |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 1360 Stücke
Im Einkaufswagen
Stück im Wert von UAH