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| Anzahl | Preis |
|---|---|
| 1+ | 18.27 EUR |
| 10+ | 16.93 EUR |
| 25+ | 16.56 EUR |
| 100+ | 14.50 EUR |
| 250+ | 13.78 EUR |
| 500+ | 13.53 EUR |
| 2720+ | 13.18 EUR |
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Technische Details MT53E128M32D2FW-046 AAT:A Micron
Description: IC DRAM 4GBIT PAR 200TFBGA, Packaging: Box, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Grade: Automotive, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 128M x 32, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Weitere Produktangebote MT53E128M32D2FW-046 AAT:A
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MT53E128M32D2FW-046 AAT:A | Hersteller : Micron Technology Inc. |
 Description: IC DRAM 4GBIT PAR 200TFBGAPackaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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