MT53E1G32D2FW-046 AAT:C Micron Technology

Description: IC DRAM 32GBIT PAR 200TFBGA, Packaging: Tray, Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 32Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 1G x 32, Grade: Automotive, Qualification: AEC-Q100.