MT53E2G32D4DE-046 AAT:C TR Micron Technology
Hersteller: Micron TechnologyDRAM Chip Mobile LPDDR4 SDRAM 64Gbit 2Gx32 1.1V/1.8V 200-Pin TFBGA T/R
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Technische Details MT53E2G32D4DE-046 AAT:C TR Micron Technology
Description: IC DRAM 64GBIT PAR 200TFBGA, Packaging: Tape & Reel (TR), Package / Case: 200-TFBGA, Mounting Type: Surface Mount, Memory Size: 64Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 105°C (TC), Voltage - Supply: 1.06V ~ 1.17V, Technology: SDRAM - Mobile LPDDR4X, Clock Frequency: 2.133 GHz, Memory Format: DRAM, Supplier Device Package: 200-TFBGA (10x14.5), Part Status: Active, Write Cycle Time - Word, Page: 18ns, Memory Interface: Parallel, Access Time: 3.5 ns, Memory Organization: 2G x 32, DigiKey Programmable: Not Verified, Grade: Automotive, Qualification: AEC-Q100.
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MT53E2G32D4DE-046 AAT:C TR | Hersteller : Micron Technology Inc. |
Description: IC DRAM 64GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 64Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Part Status: Active Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 2G x 32 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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| MT53E2G32D4DE-046 AAT:C TR | Hersteller : Micron | DRAM LPDDR4 64G 2GX32 FBGA |
Produkt ist nicht verfügbar |