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Technische Details MTM763200LBF Panasonic
Description: MOSFET N/P-CH 20V 1.9A WSMINI6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.9A, 1.2A, Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V, Rds On (Max) @ Id, Vgs: 105mOhm @ 1A, 4V, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: WSMini6-F1-B.
Weitere Produktangebote MTM763200LBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MTM763200LBF | Panasonic Electronic Components |
Description: MOSFET N/P-CH 20V 1.9A WSMINI6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.9A, 1.2A Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: WSMini6-F1-B |
Produkt ist nicht verfügbar |
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| MTM763200LBF |
Hersteller: Panasonic Electronic Components
Description: MOSFET N/P-CH 20V 1.9A WSMINI6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.9A, 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: WSMini6-F1-B
Description: MOSFET N/P-CH 20V 1.9A WSMINI6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.9A, 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: WSMini6-F1-B
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH