
MTP1306 onsemi

Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 38A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3584 pF @ 25 V
auf Bestellung 73180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
293+ | 1.63 EUR |
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Technische Details MTP1306 onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 38A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3584 pF @ 25 V.
Weitere Produktangebote MTP1306
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MTP1306 |
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auf Bestellung 44 Stücke: Lieferzeit 21-28 Tag (e) |
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MTP1306 | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 73180 Stücke: Lieferzeit 14-21 Tag (e) |
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MTP1306 | Hersteller : onsemi |
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