Technische Details MUN2212T1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SC59, Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 22 kOhms, Power - Max: 338 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SC-59, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote MUN2212T1G nach Preis ab 0.048 EUR bis 0.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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MUN2212T1G | onsemi |
 Description: TRANS PREBIAS NPN 50V 0.1A SC59Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Power - Max: 338 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-59 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2212T1G | onsemi |
Digital Transistors SS BR XSTR NPN |
auf Bestellung 5606 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2212T1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Power - Max: 338 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-59 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 28650 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2212T1G | ONN |
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auf Bestellung 1437 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MUN2212T1G |
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Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.06 EUR |
| 6000+ | 0.056 EUR |
| 9000+ | 0.048 EUR |
| MUN2212T1G |
|
Hersteller: onsemi
Digital Transistors SS BR XSTR NPN
Digital Transistors SS BR XSTR NPN
auf Bestellung 5606 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 0.31 EUR |
| 18+ | 0.19 EUR |
| 100+ | 0.12 EUR |
| 500+ | 0.083 EUR |
| 1000+ | 0.075 EUR |
| 3000+ | 0.057 EUR |
| 6000+ | 0.05 EUR |
| MUN2212T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 28650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 86+ | 0.25 EUR |
| 159+ | 0.13 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.071 EUR |
| MUN2212T1G |
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Hersteller: ONN
auf Bestellung 1437 Stücke:
Lieferzeit 21-28 Tag (e)