MUN2235T1G ON Semiconductor
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5848+ | 0.027 EUR |
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Technische Details MUN2235T1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-59, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 230 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote MUN2235T1G nach Preis ab 0.028 EUR bis 0.44 EUR
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MUN2235T1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2235T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 126000 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN2235T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 128829 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN2235T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2235T1G | Hersteller : onsemi |
Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR |
auf Bestellung 13995 Stücke: Lieferzeit 14-28 Tag (e) |
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MUN2235T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |
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MUN2235T1G | Hersteller : Sanyo |
Description: DIGITAL TRANSISTOR (BRT) Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |