Technische Details MUN2236T1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SC59, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 100 kOhms, Resistor - Base (R1): 100 kOhms, Power - Max: 338 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-59.
Weitere Produktangebote MUN2236T1G nach Preis ab 0.055 EUR bis 0.51 EUR
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MUN2236T1G | ON Semiconductor |
 Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R |
auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2236T1G | ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2236T1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Resistor - Emitter Base (R2): 100 kOhms Resistor - Base (R1): 100 kOhms Power - Max: 338 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-59 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 306000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN2236T1G | onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 2893 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN2236T1G | ONSEMI |
Description: ONSEMI - MUN2236T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 216000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN2236T1G |
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Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R
auf Bestellung 99000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12196+ | 0.055 EUR |
| MUN2236T1G |
|
Hersteller: ON Semiconductor
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R
Trans Digital BJT NPN 50V 0.1A 338mW 3-Pin SC-59 T/R
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12196+ | 0.055 EUR |
| MUN2236T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Resistor - Emitter Base (R2): 100 kOhms
Resistor - Base (R1): 100 kOhms
Power - Max: 338 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 306000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10606+ | 0.058 EUR |
| MUN2236T1G |
|
Hersteller: onsemi
Digital Transistors 100mA 50V BRT NPN
Digital Transistors 100mA 50V BRT NPN
auf Bestellung 2893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.51 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.21 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.083 EUR |
| 9000+ | 0.065 EUR |
| 24000+ | 0.061 EUR |
| MUN2236T1G |
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Hersteller: ONSEMI
Description: ONSEMI - MUN2236T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - MUN2236T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 216000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15000+ | 0.073 EUR |