MUN5113DW1T1 ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - MUN5113DW1T1 - MUN5113DW1T1, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details MUN5113DW1T1 ONSEMI
Description: TRANS PREBIAS 2PNP 50V SOT-363, Supplier Device Package: SC-88/SC70-6/SOT-363, Resistor - Emitter Base (R2): 47kOhm, Resistor - Base (R1): 47kOhm, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 187mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Bulk.
Weitere Produktangebote MUN5113DW1T1 nach Preis ab 0.13 EUR bis 0.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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MUN5113DW1T1 | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363 Resistor - Emitter Base (R2): 47kOhm Resistor - Base (R1): 47kOhm DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 187mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Bulk |
auf Bestellung 7788 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5113DW1T1 |
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auf Bestellung 2268 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MUN5113DW1T1 |
|
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhm
Resistor - Base (R1): 47kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
Description: TRANS PREBIAS 2PNP 50V SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhm
Resistor - Base (R1): 47kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Bulk
auf Bestellung 7788 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4537+ | 0.13 EUR |
| MUN5113DW1T1 |
|
auf Bestellung 2268 Stücke:
Lieferzeit 21-28 Tag (e)