MUN5113DW1T1G onsemi
Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhm
Resistor - Base (R1): 47kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
| Anzahl | Preis |
|---|---|
| 3000+ | 0.087 EUR |
| 6000+ | 0.078 EUR |
| 9000+ | 0.073 EUR |
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Technische Details MUN5113DW1T1G onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT363, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SC-88/SC70-6/SOT-363, Resistor - Emitter Base (R2): 47kOhm, Resistor - Base (R1): 47kOhm, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 187mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount.
Weitere Produktangebote MUN5113DW1T1G nach Preis ab 0.077 EUR bis 0.89 EUR
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MUN5113DW1T1G | onsemi |
Description: TRANS 2PNP PREBIAS 0.25W SOT363Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 187mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Resistor - Emitter Base (R2): 47kOhm Resistor - Base (R1): 47kOhm DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA |
auf Bestellung 267 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5113DW1T1G | onsemi |
Digital Transistors SS BR XSTR PNP 50V |
auf Bestellung 10834 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5113DW1T1G | onsemi |
Description: TRANS 2PNP PREBIAS 0.25W SOT363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhm Resistor - Emitter Base (R2): 47kOhm Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 11396 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5113DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5113DW1T1G |
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Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhm
Resistor - Base (R1): 47kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhm
Resistor - Base (R1): 47kOhm
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 105+ | 0.17 EUR |
| 156+ | 0.11 EUR |
| MUN5113DW1T1G |
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Hersteller: onsemi
Digital Transistors SS BR XSTR PNP 50V
Digital Transistors SS BR XSTR PNP 50V
auf Bestellung 10834 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 0.38 EUR |
| 13+ | 0.23 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.095 EUR |
| 3000+ | 0.077 EUR |
| MUN5113DW1T1G |
![]() |
Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhm
Resistor - Emitter Base (R2): 47kOhm
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhm
Resistor - Emitter Base (R2): 47kOhm
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 11396 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 69+ | 0.26 EUR |
| 110+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| MUN5113DW1T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.89 EUR |

