Produkte > ONSEMI > MUN5113DW1T1G
MUN5113DW1T1G

MUN5113DW1T1G onsemi

dta144ed-d.pdf Hersteller: onsemi
Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhm
Resistor - Emitter Base (R2): 47kOhm
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.086 EUR
6000+ 0.08 EUR
9000+ 0.066 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details MUN5113DW1T1G onsemi

Description: TRANS 2PNP PREBIAS 0.25W SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 187mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 47kOhm, Resistor - Emitter Base (R2): 47kOhm, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote MUN5113DW1T1G nach Preis ab 0.066 EUR bis 0.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MUN5113DW1T1G MUN5113DW1T1G Hersteller : onsemi dta144ed-d.pdf Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhm
Resistor - Emitter Base (R2): 47kOhm
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14977 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
64+ 0.28 EUR
130+ 0.14 EUR
Mindestbestellmenge: 44
MUN5113DW1T1G MUN5113DW1T1G Hersteller : onsemi dta144ed-d.pdf Description: TRANS 2PNP PREBIAS 0.25W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhm
Resistor - Emitter Base (R2): 47kOhm
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 14977 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
50+ 0.35 EUR
103+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
MUN5113DW1T1G MUN5113DW1T1G Hersteller : ONSEMI MUN5113DW1.PDF Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Anzahl je Verpackung: 5 Stücke
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
110+0.64 EUR
395+ 0.19 EUR
1085+ 0.066 EUR
Mindestbestellmenge: 110
MUN5113DW1T1G MUN5113DW1T1G Hersteller : ONSEMI MUN5113DW1.PDF Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
110+0.64 EUR
Mindestbestellmenge: 110
MUN5113DW1T1G MUN5113DW1T1G Hersteller : onsemi DTA144ED_D-2310855.pdf Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V
auf Bestellung 5067 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
68+0.77 EUR
99+ 0.53 EUR
241+ 0.22 EUR
1000+ 0.15 EUR
3000+ 0.12 EUR
9000+ 0.099 EUR
24000+ 0.091 EUR
Mindestbestellmenge: 68
MUN5113DW1T1G MUN5113DW1T1G Hersteller : ON Semiconductor mun5111dw1t1-d.pdf Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Produkt ist nicht verfügbar