| Anzahl | Privatkunde |
|---|---|
| 8+ | 0.45 EUR |
| 13+ | 0.27 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.092 EUR |
Produktrezensionen
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Technische Details MUN5113DW1T1G onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: SC-88/SC70-6/SOT-363, Resistor - Emitter Base (R2): 47kOhm, Resistor - Base (R1): 47kOhm, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 187mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount.
Weitere Produktangebote MUN5113DW1T1G nach Preis ab 0.14 EUR bis 1.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MUN5113DW1T1G | onsemi |
 Description: TRANS PREBIAS 2PNP 50V SOT-363Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhm Resistor - Emitter Base (R2): 47kOhm Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 816 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5113DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ Mounting: SMD Case: SC70-6; SC88; SOT363 Type of transistor: PNP x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.187W Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5113DW1T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhm
Resistor - Emitter Base (R2): 47kOhm
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhm
Resistor - Emitter Base (R2): 47kOhm
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 0.5 EUR |
| 70+ | 0.3 EUR |
| 113+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| MUN5113DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 47kΩ
Mounting: SMD
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 80+ | 1.06 EUR |