MUN5231T1G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 10969+ | 0.051 EUR |
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Technische Details MUN5231T1G onsemi
Description: TRANS PREBIAS NPN 50V SC70-3, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Power - Max: 202 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-70-3 (SOT323), DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount.
Weitere Produktangebote MUN5231T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MUN5231T1G | ON Semiconductor |
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN |
auf Bestellung 10545 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MUN5231T1G |
|
Hersteller: ON Semiconductor
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
auf Bestellung 10545 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH