MUN5232DW1T1G ONSEMI
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1083+ | 0.066 EUR |
1202+ | 0.059 EUR |
1651+ | 0.043 EUR |
1749+ | 0.041 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MUN5232DW1T1G ONSEMI
Description: TRANS 2NPN PREBIAS 0.25W SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363.
Weitere Produktangebote MUN5232DW1T1G nach Preis ab 0.041 EUR bis 0.75 EUR
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MUN5232DW1T1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SOT363 Current gain: 30 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5232DW1T1G | Hersteller : onsemi |
Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN5232DW1T1G | Hersteller : onsemi |
Description: TRANS 2NPN PREBIAS 0.25W SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
auf Bestellung 9731 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN5232DW1T1G | Hersteller : ON Semiconductor | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V |
auf Bestellung 6 Stücke: Lieferzeit 14-28 Tag (e) |
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MUN5232DW1T1G | Hersteller : ON Semiconductor | Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |