Produkte > ONSEMI > MUN5232DW1T1G
MUN5232DW1T1G

MUN5232DW1T1G ONSEMI

dtc143ed-d.pdf Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1083+0.066 EUR
1202+ 0.059 EUR
1651+ 0.043 EUR
1749+ 0.041 EUR
Mindestbestellmenge: 1083
Produktrezensionen
Produktbewertung abgeben

Technische Details MUN5232DW1T1G ONSEMI

Description: TRANS 2NPN PREBIAS 0.25W SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363.

Weitere Produktangebote MUN5232DW1T1G nach Preis ab 0.041 EUR bis 0.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MUN5232DW1T1G MUN5232DW1T1G Hersteller : ONSEMI dtc143ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.385W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1083+0.066 EUR
1202+ 0.059 EUR
1651+ 0.043 EUR
1749+ 0.041 EUR
Mindestbestellmenge: 1083
MUN5232DW1T1G MUN5232DW1T1G Hersteller : onsemi dtc143ed-d.pdf Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.13 EUR
6000+ 0.12 EUR
9000+ 0.098 EUR
Mindestbestellmenge: 3000
MUN5232DW1T1G MUN5232DW1T1G Hersteller : onsemi dtc143ed-d.pdf Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 9731 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
35+0.75 EUR
50+ 0.52 EUR
103+ 0.25 EUR
500+ 0.21 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 35
MUN5232DW1T1G MUN5232DW1T1G Hersteller : ON Semiconductor DTC143ED_D-2311082.pdf Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
auf Bestellung 6 Stücke:
Lieferzeit 14-28 Tag (e)
MUN5232DW1T1G MUN5232DW1T1G Hersteller : ON Semiconductor mun5211dw1t1-d.pdf Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)