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MUN5235T1G

MUN5235T1G onsemi

dtc123j-d.pdf
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.055 EUR
6000+0.049 EUR
9000+0.046 EUR
15000+0.043 EUR
21000+0.04 EUR
30000+0.038 EUR
75000+0.033 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MUN5235T1G onsemi

Description: TRANS PREBIAS NPN 50V SC70-3, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Power - Max: 202 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SC-70-3 (SOT323), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA.

Weitere Produktangebote MUN5235T1G nach Preis ab 0.055 EUR bis 0.3 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
MUN5235T1G MUN5235T1G onsemi DTC123J_D-1387473.pdf Digital Transistors 100mA 50V BRT NPN
auf Bestellung 26957 Stücke:
Lieferzeit 10-14 Tag (e)
12+0.29 EUR
20+0.18 EUR
100+0.1 EUR
500+0.082 EUR
1000+0.071 EUR
3000+0.058 EUR
6000+0.055 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MUN5235T1G MUN5235T1G onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V SC70-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 85960 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
122+0.17 EUR
199+0.11 EUR
500+0.076 EUR
1000+0.068 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MUN5235T1G DTC123J_D-1387473.pdf
MUN5235T1G
Hersteller: onsemi
Digital Transistors 100mA 50V BRT NPN
auf Bestellung 26957 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+0.29 EUR
20+0.18 EUR
100+0.1 EUR
500+0.082 EUR
1000+0.071 EUR
3000+0.058 EUR
6000+0.055 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MUN5235T1G dtc123j-d.pdf
MUN5235T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Power - Max: 202 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 85960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
122+0.17 EUR
199+0.11 EUR
500+0.076 EUR
1000+0.068 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH