Produkte > ONSEMI > MUN5312DW1T2G
MUN5312DW1T2G

MUN5312DW1T2G onsemi

dtc124ep-d.pdf
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 174000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.075 EUR
6000+0.067 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MUN5312DW1T2G onsemi

Description: TRANS PREBIAS 1NPN 1PNP SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 385mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.

Weitere Produktangebote MUN5312DW1T2G nach Preis ab 0.067 EUR bis 0.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MUN5312DW1T2G MUN5312DW1T2G onsemi dtc124ep-d.pdf Digital Transistors 100mA Complementary 50V NPN & PNP
auf Bestellung 4451 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.39 EUR
12+0.24 EUR
100+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
3000+0.074 EUR
6000+0.067 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MUN5312DW1T2G MUN5312DW1T2G onsemi dtc124ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 176860 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
75+0.24 EUR
120+0.15 EUR
500+0.11 EUR
1000+0.095 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
MUN5312DW1T2G dtc124ep-d.pdf
MUN5312DW1T2G
Hersteller: onsemi
Digital Transistors 100mA Complementary 50V NPN & PNP
auf Bestellung 4451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.39 EUR
12+0.24 EUR
100+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
3000+0.074 EUR
6000+0.067 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MUN5312DW1T2G dtc124ep-d.pdf
MUN5312DW1T2G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 176860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
75+0.24 EUR
120+0.15 EUR
500+0.11 EUR
1000+0.095 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH