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MUN5312DW1T2G

MUN5312DW1T2G onsemi


dtc124ep-d.pdf Hersteller: onsemi
Description: TRANS NPN/PNP PREBIAS SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.088 EUR
6000+ 0.082 EUR
9000+ 0.068 EUR
Mindestbestellmenge: 3000
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Technische Details MUN5312DW1T2G onsemi

Description: TRANS NPN/PNP PREBIAS SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 385mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.

Weitere Produktangebote MUN5312DW1T2G nach Preis ab 0.062 EUR bis 0.53 EUR

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MUN5312DW1T2G MUN5312DW1T2G Hersteller : onsemi DTC124EP_D-2311008.pdf Digital Transistors 100mA Complementary 50V NPN & PNP
auf Bestellung 4705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.52 EUR
10+ 0.36 EUR
100+ 0.15 EUR
1000+ 0.1 EUR
3000+ 0.081 EUR
9000+ 0.067 EUR
24000+ 0.062 EUR
Mindestbestellmenge: 6
MUN5312DW1T2G MUN5312DW1T2G Hersteller : onsemi dtc124ep-d.pdf Description: TRANS NPN/PNP PREBIAS SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 17980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
49+ 0.36 EUR
101+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
MUN5312DW1T2G MUN5312DW1T2G Hersteller : ON Semiconductor dtc124ep-d.pdf Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
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