MUN5316DW1T1G ON Semiconductor
auf Bestellung 599083 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 11236+ | 0.048 EUR |
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Technische Details MUN5316DW1T1G ON Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.
Weitere Produktangebote MUN5316DW1T1G nach Preis ab 0.036 EUR bis 0.39 EUR
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 14725 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : onsemi |
Digital Transistors 100mA Complementary 50V NPN & PNP |
auf Bestellung 7150 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5316DW1T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 3170 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5316DW1T1G | Hersteller : ON |
06+ SOT-363 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MUN5316DW1T1G | Hersteller : ON Semiconductor |
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auf Bestellung 12087 Stücke: Lieferzeit 21-28 Tag (e) |
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| MUN5316DW1T1G | Hersteller : ONSEMI |
Description: ONSEMI - MUN5316DW1T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 691808 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5316DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |
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MUN5316DW1T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |
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MUN5316DW1T1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MUN5316DW1T1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
Produkt ist nicht verfügbar |