MUN5332DW1T1G ON Semiconductor
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.054 EUR |
| 6000+ | 0.051 EUR |
| 9000+ | 0.044 EUR |
| 15000+ | 0.042 EUR |
| 21000+ | 0.039 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MUN5332DW1T1G ON Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363.
Weitere Produktangebote MUN5332DW1T1G nach Preis ab 0.04 EUR bis 0.42 EUR
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MUN5332DW1T1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5332DW1T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5332DW1T1G | Hersteller : onsemi |
Digital Transistors 100mA Complementary 50V NPN & PNP |
auf Bestellung 21415 Stücke: Lieferzeit 10-14 Tag (e) |
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MUN5332DW1T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 |
auf Bestellung 99074 Stücke: Lieferzeit 10-14 Tag (e) |
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| MUN5332DW1T1G | Hersteller : ONSEMI |
Description: ONSEMI - MUN5332DW1T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 28000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5332DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |
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MUN5332DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |