MUN5335DW1T1G ON Semiconductor
auf Bestellung 531000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4425+ | 0.035 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MUN5335DW1T1G ON Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.
Weitere Produktangebote MUN5335DW1T1G nach Preis ab 0.05 EUR bis 0.73 EUR
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MUN5335DW1T1G | Hersteller : ON Semiconductor |
 Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 531000 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5335DW1T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 48000 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN5335DW1T1G | Hersteller : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP 50V SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 50758 Stücke: Lieferzeit 21-28 Tag (e) |
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MUN5335DW1T1G | Hersteller : onsemi |
Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP |
auf Bestellung 14111 Stücke: Lieferzeit 14-28 Tag (e) |
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MUN5335DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MUN5335DW1T1G | Hersteller : ONSEMI |
MUN5335DW1T1G Complementary transistors |
Produkt ist nicht verfügbar |
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MUN5335DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |
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MUN5335DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R |
Produkt ist nicht verfügbar |