MUR460S R6G Taiwan Semiconductor Corporation



Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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Technische Details MUR460S R6G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 4A DO214AB, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 65pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).

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MUR460S R6G MUR460S R6G Taiwan Semiconductor Rectifiers 50ns, 4A, 600V, High Efficient Recovery Rectifier
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Mindestbestellmenge: 3000 Stücke
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MUR460S R6G
Hersteller: Taiwan Semiconductor
Rectifiers 50ns, 4A, 600V, High Efficient Recovery Rectifier
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH