
MURS320HE3_A/I Vishay General Semiconductor
auf Bestellung 3060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1.24 EUR |
10+ | 1.07 EUR |
100+ | 0.74 EUR |
500+ | 0.62 EUR |
1000+ | 0.53 EUR |
3500+ | 0.47 EUR |
7000+ | 0.46 EUR |
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Technische Details MURS320HE3_A/I Vishay General Semiconductor
Description: DIODE GEN PURP 200V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote MURS320HE3_A/I
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MURS320HE3_A/I | Hersteller : Vishay |
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MURS320HE3_A/I | Hersteller : Vishay |
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MURS320HE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |