MWI100-12A8T IXYS

Description: IGBT MODULE 1200V 160A 640W E3, Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V, Current - Collector Cutoff (Max): 6.3 mA, Power - Max: 640 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 160 A, IGBT Type: NPT, Supplier Device Package: E3, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: E3, Packaging: Tube.