MWI60-12T6K IXYS
Hersteller: IXYSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E1-Pack
Pulsed collector current: 70A
Collector current: 41A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Application: for UPS; motors
Power dissipation: 200W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
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Technische Details MWI60-12T6K IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Case: E1-Pack, Pulsed collector current: 70A, Collector current: 41A, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Technology: NPT, Topology: IGBT three-phase bridge; NTC thermistor, Max. off-state voltage: 1.2kV, Application: for UPS; motors, Power dissipation: 200W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MWI60-12T6K
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| MWI60-12T6K | Hersteller : IXYS |
Description: IGBT MODULE 1200V 58A 200W E1 Packaging: Box Package / Case: E1 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: E1 IGBT Type: Trench Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V |
Produkt ist nicht verfügbar |
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MWI60-12T6K | Hersteller : IXYS |
Discrete Semiconductor Modules 60 Amps 1200V |
Produkt ist nicht verfügbar |
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| MWI60-12T6K | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E1-Pack Pulsed collector current: 70A Collector current: 41A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: NPT Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Application: for UPS; motors Power dissipation: 200W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |