MWI60-12T6K IXYS
Hersteller: IXYSDescription: IGBT MODULE 1200V 58A 200W E1
Packaging: Box
Package / Case: E1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: E1
IGBT Type: Trench
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
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Technische Details MWI60-12T6K IXYS
Description: IGBT MODULE 1200V 58A 200W E1, Packaging: Box, Package / Case: E1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: E1, IGBT Type: Trench, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 200 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V.
Weitere Produktangebote MWI60-12T6K
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MWI60-12T6K | Hersteller : IXYS |
Discrete Semiconductor Modules 60 Amps 1200V |
Produkt ist nicht verfügbar |
