Technische Details MWI80-12T6K IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Case: E1-Pack, Pulsed collector current: 100A, Collector current: 56A, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, Technology: HiPerFRED™, Topology: IGBT three-phase bridge; NTC thermistor, Max. off-state voltage: 1.2kV, Application: for UPS; motors, Power dissipation: 270W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: IGBT, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MWI80-12T6K
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MWI80-12T6K | Hersteller : IXYS |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E1-Pack Pulsed collector current: 100A Collector current: 56A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: HiPerFRED™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Application: for UPS; motors Power dissipation: 270W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MWI80-12T6K | Hersteller : IXYS |
Description: IGBT MODULE 1200V 80A 270W E1 Packaging: Box Package / Case: E1 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: E1 IGBT Type: Trench Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 270 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V |
Produkt ist nicht verfügbar |
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| MWI80-12T6K | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E1-Pack Pulsed collector current: 100A Collector current: 56A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Technology: HiPerFRED™ Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Application: for UPS; motors Power dissipation: 270W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |