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Technische Details MX29GL512FDT2I-11G Macronix
Category: Parallel FLASH memories - integ. circ., Description: IC: FLASH memory; 512MbFLASH; 64Mx8bit; 110ns; TSOP56; parallel, Type of integrated circuit: FLASH memory, Kind of memory: NOR, Memory: 512Mb FLASH, Memory organisation: 64Mx8bit, Operating voltage: 2.7...3.6V, Access time: 110ns, Case: TSOP56, Kind of interface: parallel, Mounting: SMD, Operating temperature: -40...85°C.
Weitere Produktangebote MX29GL512FDT2I-11G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MX29GL512FDT2I-11G/TRAY | MACRONIX INTERNATIONAL |
 Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 512MbFLASH; 64Mx8bit; 110ns; TSOP56; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Memory organisation: 64Mx8bit Operating voltage: 2.7...3.6V Access time: 110ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MX29GL512FDT2I-11G/TRAY |
|
Hersteller: MACRONIX INTERNATIONAL
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; 64Mx8bit; 110ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Memory organisation: 64Mx8bit
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; 64Mx8bit; 110ns; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Memory organisation: 64Mx8bit
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH