MXP120A080FL-GE3 VISHAY

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W, Technology: MaxSiC™; SiC, Mounting: THT, Case: TO247-4, Kind of package: tube, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Drain current: 18A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, On-state resistance: 0.175Ω, Pulsed drain current: 58A, Power dissipation: 56W, Gate charge: 47.3nC.