Technische Details MXP120A250FL-GE3 Vishay Siliconix
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W, Technology: MaxSiC™; SiC, Mounting: THT, Case: TO247-4, Kind of package: tube, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Drain current: 6.7A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Gate-source voltage: -5...20V, On-state resistance: 0.5Ω, Pulsed drain current: 21A, Power dissipation: 22W, Gate charge: 20.3nC.
Weitere Produktangebote MXP120A250FL-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MXP120A250FL-GE3 | Vishay Semiconductors | SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET |
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| MXP120A250FL-GE3 | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-4 Kind of package: tube Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.5Ω Pulsed drain current: 21A Power dissipation: 22W Gate charge: 20.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MXP120A250FL-GE3 |
Hersteller: Vishay Semiconductors
SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXP120A250FL-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH