MXP120A250FW-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 313mOhm @ 4A, 20V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 10mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 800 V
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Technische Details MXP120A250FW-GE3 Vishay Siliconix
Description: SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Rds On (Max) @ Id, Vgs: 313mOhm @ 4A, 20V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 3.1V @ 10mA, Supplier Device Package: TO-247-3L, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 800 V.
Weitere Produktangebote MXP120A250FW-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MXP120A250FW-GE3 | Vishay Semiconductors | SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MXP120A250FW-GE3 | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W Technology: MaxSiC™; SiC Mounting: THT Case: TO247-3 Kind of package: tube Polarisation: unipolar Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 0.5Ω Pulsed drain current: 21A Power dissipation: 22W Gate charge: 20.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MXP120A250FW-GE3 |
Hersteller: Vishay Semiconductors
SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXP120A250FW-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 6.7A; Idm: 21A; 22W
Technology: MaxSiC™; SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 0.5Ω
Pulsed drain current: 21A
Power dissipation: 22W
Gate charge: 20.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH