N0300N-T1B-AT Renesas Electronics Corporation


RNCCS04715-1.pdf?t.download=true&u=5oefqw
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 30V 4.5A SC96-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-96-3, Thin Mini Mold
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Bulk
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Technische Details N0300N-T1B-AT Renesas Electronics Corporation

Description: MOSFET N-CH 30V 4.5A SC96-3, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SC-96-3, Thin Mini Mold, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Bulk.