N0413N-ZK-E1-AY Renesas Electronics Corporation


n0413n-datasheet
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.89 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details N0413N-ZK-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 40V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 1.5W (Ta), 119W (Tc), Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V.

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N0413N-ZK-E1-AY N0413N-ZK-E1-AY Renesas Electronics Corporation n0413n-datasheet Description: MOSFET N-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 3780 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.43 EUR
10+3.9 EUR
100+2.71 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
N0413N-ZK-E1-AY N0413N-ZK-E1-AY Renesas Electronics REN_r07ds0555ej0200_n0413n_DST_20200610-2930781.pdf MOSFETs MOSFET
auf Bestellung 694 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.59 EUR
10+4.14 EUR
100+2.95 EUR
500+2.83 EUR
800+2.23 EUR
2400+2.2 EUR
5600+2.14 EUR
Im Einkaufswagen  Stück im Wert von  UAH
N0413N-ZK-E1-AY n0413n-datasheet
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 3780 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
10+3.9 EUR
100+2.71 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
N0413N-ZK-E1-AY REN_r07ds0555ej0200_n0413n_DST_20200610-2930781.pdf
Hersteller: Renesas Electronics
MOSFETs MOSFET
auf Bestellung 694 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.59 EUR
10+4.14 EUR
100+2.95 EUR
500+2.83 EUR
800+2.23 EUR
2400+2.2 EUR
5600+2.14 EUR
Im Einkaufswagen  Stück im Wert von  UAH