N0434N-S23-AY

N0434N-S23-AY Renesas Electronics Corporation


n0434n-datasheet Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 100A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
auf Bestellung 2975 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.22 EUR
10+ 3.51 EUR
100+ 2.79 EUR
500+ 2.36 EUR
1000+ 2.01 EUR
2000+ 1.91 EUR
Mindestbestellmenge: 5
Produktrezensionen
Produktbewertung abgeben

Technische Details N0434N-S23-AY Renesas Electronics Corporation

Description: MOSFET N-CH 40V 100A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V, Power Dissipation (Max): 1.5W (Ta), 119W (Tc), Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V.

Weitere Produktangebote N0434N-S23-AY nach Preis ab 1.87 EUR bis 4.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
N0434N-S23-AY N0434N-S23-AY Hersteller : Renesas Electronics REN_r07ds0556ej0200_n0434n_DST_20200610-2930794.pdf MOSFET MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.26 EUR
10+ 3.54 EUR
100+ 2.82 EUR
500+ 2.38 EUR
1000+ 1.92 EUR
5000+ 1.87 EUR