N0434N-S23-AY Renesas Electronics Corporation

Description: MOSFET N-CH 40V 100A TO262, Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-262, Power Dissipation (Max): 1.5W (Ta), 119W (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.