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N0436N-ZK-E1-AY

N0436N-ZK-E1-AY Renesas Electronics

REN_r07ds1414ej0100_n0436n_DST_20190930-2930550.pdf Hersteller: Renesas Electronics
MOSFETs MOSFET
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10+3.48 EUR
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500+2.34 EUR
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Technische Details N0436N-ZK-E1-AY Renesas Electronics

Description: ABU / MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Ta), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 28A, 10V, Power Dissipation (Max): 1W (Ta), 87.4W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V.

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N0436N-ZK-E1-AY N0436N-ZK-E1-AY Hersteller : Renesas Electronics Corporation n0436n-datasheet Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 28A, 10V
Power Dissipation (Max): 1W (Ta), 87.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 5857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.61 EUR
10+3.65 EUR
100+2.53 EUR
500+2.06 EUR
1000+1.91 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
N0436N-ZK-E1-AY N0436N-ZK-E1-AY Hersteller : Renesas Electronics Corporation n0436n-datasheet Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 28A, 10V
Power Dissipation (Max): 1W (Ta), 87.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH