N0601N-ZK-E1-AY

N0601N-ZK-E1-AY Renesas Electronics America Inc


n0601n-datasheet Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 1.5W (Ta), 156W (Tc)
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V
auf Bestellung 1600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+3.13 EUR
Mindestbestellmenge: 800
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Technische Details N0601N-ZK-E1-AY Renesas Electronics America Inc

Description: MOSFET N-CH 60V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V, Power Dissipation (Max): 1.5W (Ta), 156W (Tc), Supplier Device Package: TO-263, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V.

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N0601N-ZK-E1-AY N0601N-ZK-E1-AY Hersteller : Renesas Electronics REN_r07ds0557ej0200_n0601n_DST_20200610-2930903.pdf MOSFET PowerMOSFET
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