N0603N-S23-AY Renesas Electronics
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.15 EUR |
| 10+ | 2.66 EUR |
| 100+ | 2.16 EUR |
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Technische Details N0603N-S23-AY Renesas Electronics
Description: MOSFET N-CH 60V 100A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V, Power Dissipation (Max): 1.5W (Ta), 156W (Tc), Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V.
Weitere Produktangebote N0603N-S23-AY nach Preis ab 2.29 EUR bis 4.44 EUR
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N0603N-S23-AY | Hersteller : Renesas Electronics Corporation |
 Description: MOSFET N-CH 60V 100A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 10V Power Dissipation (Max): 1.5W (Ta), 156W (Tc) Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 25 V |
auf Bestellung 1470 Stücke: Lieferzeit 10-14 Tag (e) |
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| N0603N-S23-AY | Hersteller : Renesas |
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube |
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