N0607N-ZK-E1-AY Renesas Electronics Corporation
Hersteller: Renesas Electronics CorporationDescription: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32.5A, 10V
Power Dissipation (Max): 1W (Ta), 87.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.40 EUR |
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Technische Details N0607N-ZK-E1-AY Renesas Electronics Corporation
Description: ABU / MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Ta), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32.5A, 10V, Power Dissipation (Max): 1W (Ta), 87.4W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V.
Weitere Produktangebote N0607N-ZK-E1-AY nach Preis ab 1.49 EUR bis 4.72 EUR
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N0607N-ZK-E1-AY | Hersteller : Renesas Electronics |
MOSFETs P.TRANS. N-CH POWER MOSFET 60V TO-252 |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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N0607N-ZK-E1-AY | Hersteller : Renesas Electronics Corporation |
Description: ABU / MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32.5A, 10V Power Dissipation (Max): 1W (Ta), 87.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
auf Bestellung 8866 Stücke: Lieferzeit 10-14 Tag (e) |
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