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N0607N-ZK-E1-AY

N0607N-ZK-E1-AY Renesas Electronics Corporation

n0607n-datasheet-0 Hersteller: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32.5A, 10V
Power Dissipation (Max): 1W (Ta), 87.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.43 EUR
6000+ 1.38 EUR
Mindestbestellmenge: 3000
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Technische Details N0607N-ZK-E1-AY Renesas Electronics Corporation

Description: ABU / MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Ta), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32.5A, 10V, Power Dissipation (Max): 1W (Ta), 87.4W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V.

Weitere Produktangebote N0607N-ZK-E1-AY nach Preis ab 1.51 EUR bis 3.19 EUR

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Preis ohne MwSt
N0607N-ZK-E1-AY N0607N-ZK-E1-AY Hersteller : Renesas Electronics Corporation n0607n-datasheet-0 Description: ABU / MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32.5A, 10V
Power Dissipation (Max): 1W (Ta), 87.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 8871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.19 EUR
10+ 2.64 EUR
100+ 2.1 EUR
500+ 1.78 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 6
N0607N-ZK-E1-AY N0607N-ZK-E1-AY Hersteller : Renesas Electronics REN_r07ds1250ej0202_n0607n_DST_20190930-2508835.pdf MOSFET P.TRANS. N-CH POWER MOSFET 60V TO-252
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