NAND01GW3B2CZA6E
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Lieferzeit 21-28 Tag (e)
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Technische Details NAND01GW3B2CZA6E
Description: IC FLASH 1GBIT PARALLEL 63VFBGA, Packaging: Tray, Package / Case: 63-TFBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NAND, Memory Format: FLASH, Supplier Device Package: 63-VFBGA (9.5x12), Write Cycle Time - Word, Page: 25ns, Memory Interface: Parallel, Access Time: 25 ns, Memory Organization: 128M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote NAND01GW3B2CZA6E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NAND01GW3B2CZA6E | Hersteller : Micron Technology Inc. |
Description: IC FLASH 1GBIT PARALLEL 63VFBGA Packaging: Tray Package / Case: 63-TFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 63-VFBGA (9.5x12) Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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