NAND256W3A0BE06 Micron Technology
Hersteller: Micron Technology128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 528 BYTE/264 WORD PAGE, 1.8V/3V, NAND FLASH MEMORIES
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Technische Details NAND256W3A0BE06 Micron Technology
Description: IC FLASH 256MBIT PAR 48TSOP I, Packaging: Bulk, Package / Case: 48-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NAND, Memory Format: FLASH, Supplier Device Package: 48-TSOP I, Write Cycle Time - Word, Page: 50ns, Memory Interface: Parallel, Access Time: 50 ns, Memory Organization: 32M x 8, DigiKey Programmable: Not Verified.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| NAND256W3A0BE06 | Hersteller : Micron Technology Inc. |
Description: IC FLASH 256MBIT PAR 48TSOP I Packaging: Bulk Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 50ns Memory Interface: Parallel Access Time: 50 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
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