Technische Details NAND512W3A2CN6E
- FLASH NAND 512MB, SMD, TSOP48, 512
- Memory Type:Flash, NAND
- Interface Type:Parallel
- Memory Size:512Mbit
- Memory Configuration:64M x 8bit
- Read Cycle Time, tRC:30ns
- Page Size:528Byte
- Block Size:16896Byte
- Memory Voltage Vcc:3.3V
- Read/Write Cycles:4
- Min Supply Voltage:2.7V
- Max Supply Voltage:3.6V
- Termination Type:SMD
- Case Style:TSOP
- No. of Pins:48
- Operating Temperature Range:-40`C to + 85`C
- Access Time:12es
- Base Number:512
- Max Operating Temperature:85`C
- Min Temperature Operating:-40`C
- Voltage Vcc:3.3V
- Memory IC Case Style:TSOP
Weitere Produktangebote NAND512W3A2CN6E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NAND512W3A2CN6E | Hersteller : STM |
 Група товару: Мікросхеми пам'яті Од. вим: шт |
Produkt ist nicht verfügbar |
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NAND512W3A2CN6E | Hersteller : Micron Technology Inc. |
Description: IC FLASH 512MBIT PARALLEL 48TSOP Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Memory Format: FLASH Supplier Device Package: 48-TSOP Part Status: Obsolete Write Cycle Time - Word, Page: 50ns Memory Interface: Parallel Access Time: 50 ns Memory Organization: 64M x 8 |
Produkt ist nicht verfügbar |
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| NAND512W3A2CN6E | Hersteller : Micron |
NAND Flash |
Produkt ist nicht verfügbar |
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NAND512W3A2CN6E | Hersteller : STMicroelectronics |
NAND Flash 512 MBIT MEM ARRAY NAND FLASH MEMORY |
Produkt ist nicht verfügbar |