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NC1D120C30KTNG

NC1D120C30KTNG NovuSem

NC1D120C30KTNG_prod.pdf
Hersteller: NovuSem
Description: DIODE SIL CARB 1200V 30A TO2472L
Current - Reverse Leakage @ Vr: 85 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2L
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 2125pF @ 0.1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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Technische Details NC1D120C30KTNG NovuSem

Description: DIODE SIL CARB 1200V 30A TO2472L, Current - Reverse Leakage @ Vr: 85 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2L, Current - Average Rectified (Io): 30A, Capacitance @ Vr, F: 2125pF @ 0.1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.