NC1M120C12WCNG NovuSem
Hersteller: NovuSem
Description: SiC MOS Wafer 12mOhm 1200V
Packaging: Tray
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Description: SiC MOS Wafer 12mOhm 1200V
Packaging: Tray
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
auf Bestellung 2180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 218+ | 61.81 EUR |
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Technische Details NC1M120C12WCNG NovuSem
Description: SiC MOS Wafer 12mOhm 1200V, Packaging: Tray, Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 214A (Tc), Drive Voltage (Max Rds On, Min Rds On): 20V.