NCP5106BDR2G ON Semiconductor
Hersteller: ON SemiconductorDriver 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 90+ | 1.74 EUR |
| 92+ | 1.65 EUR |
| 132+ | 1.1 EUR |
| 250+ | 1.05 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.69 EUR |
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Technische Details NCP5106BDR2G ON Semiconductor
Category: MOSFET/IGBT drivers, Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA, Type of integrated circuit: driver, Topology: IGBT half-bridge; MOSFET half-bridge, Kind of integrated circuit: gate driver; high-/low-side, Case: SO8, Output current: -500...250mA, Number of channels: 2, Supply voltage: 10...20V DC, Integrated circuit features: integrated bootstrap functionality, Mounting: SMD, Operating temperature: -40...125°C, Impulse rise time: 160ns, Pulse fall time: 75ns, Kind of package: reel; tape, Voltage class: 600V, Protection: undervoltage UVP, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote NCP5106BDR2G nach Preis ab 0.66 EUR bis 3.2 EUR
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NCP5106BDR2G | Hersteller : ON Semiconductor |
Driver 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP5106BDR2G | Hersteller : onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 85ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 826 Stücke: Lieferzeit 21-28 Tag (e) |
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NCP5106BDR2G | Hersteller : onsemi |
Gate Drivers HIGH VOLT MOSFET DR LO MOSFET IGBT DRVR |
auf Bestellung 18508 Stücke: Lieferzeit 14-28 Tag (e) |
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NCP5106BDR2G | Hersteller : ON Semiconductor |
Driver 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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NCP5106BDR2G | Hersteller : ON Semiconductor |
Driver 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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NCP5106BDR2G | Hersteller : ONSEMI |
Description: ONSEMI - NCP5106BDR2G - MOSFET/IGBT-Treiber, High-Side & Low-Side, 10V-20V Versorgung, 500mAout, 100ns Verzögerung, SOIC-8 Sinkstrom: 500 Treiberkonfiguration: High-Side und Low-Side Leistungsschalter: IGBT, MOSFET Eingang: Nicht invertierend Anzahl der Kanäle: 2 Betriebstemperatur, min.: -40 Versorgungsspannung, min.: 10 Quellstrom: 250 Bauform - Treiber: SOIC Anzahl der Pins: 8 Produktpalette: - Versorgungsspannung, max.: 20 Eingabeverzögerung: 100 Ausgabeverzögerung: 100 Betriebstemperatur, max.: 125 SVHC: No SVHC (10-Jun-2022) |
Produkt ist nicht verfügbar |
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NCP5106BDR2G | Hersteller : ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -500...250mA Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 160ns Pulse fall time: 75ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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NCP5106BDR2G | Hersteller : onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 85ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 250mA, 500mA Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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NCP5106BDR2G | Hersteller : ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -500...250mA Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 160ns Pulse fall time: 75ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |