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NCP5109BDR2G

NCP5109BDR2G onsemi

ncp5109-d.pdf Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 85ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.14 EUR
Mindestbestellmenge: 2500
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Technische Details NCP5109BDR2G onsemi

Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 200 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 85ns, 35ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.3V, Current - Peak Output (Source, Sink): 250mA, 500mA, DigiKey Programmable: Not Verified.

Weitere Produktangebote NCP5109BDR2G nach Preis ab 1.07 EUR bis 2.83 EUR

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NCP5109BDR2G NCP5109BDR2G Hersteller : onsemi NCP5109_D-2317118.pdf Gate Drivers MOSFET / IGBT Drivers, Dual Input, High Voltage, High and Low Side, 200 V
auf Bestellung 2077 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
23+2.29 EUR
26+ 2.03 EUR
100+ 1.53 EUR
500+ 1.48 EUR
1000+ 1.17 EUR
2500+ 1.11 EUR
5000+ 1.07 EUR
Mindestbestellmenge: 23
NCP5109BDR2G NCP5109BDR2G Hersteller : onsemi ncp5109-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 85ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 3241 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.83 EUR
11+ 2.53 EUR
25+ 2.4 EUR
100+ 1.84 EUR
250+ 1.63 EUR
500+ 1.54 EUR
1000+ 1.2 EUR
Mindestbestellmenge: 10
NCP5109BDR2G NCP5109BDR2G Hersteller : ONSEMI ncp5109-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Operating temperature: -40...125°C
Mounting: SMD
Output current: -500...250mA
Type of integrated circuit: driver
Pulse fall time: 75ns
Voltage class: 200V
Case: SO8
Kind of integrated circuit: gate driver; high-side; low-side
Impulse rise time: 160ns
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NCP5109BDR2G NCP5109BDR2G Hersteller : ONSEMI ncp5109-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Operating temperature: -40...125°C
Mounting: SMD
Output current: -500...250mA
Type of integrated circuit: driver
Pulse fall time: 75ns
Voltage class: 200V
Case: SO8
Kind of integrated circuit: gate driver; high-side; low-side
Impulse rise time: 160ns
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 10...20V DC
Produkt ist nicht verfügbar