Produkte > ONSEMI > NCP5109BDR2G
NCP5109BDR2G

NCP5109BDR2G onsemi

NCP5109_D-2317118.pdf Hersteller: onsemi
Gate Drivers MOSFET / IGBT Drivers, Dual Input, High Voltage, High and Low Side, 200 V
auf Bestellung 4110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.22 EUR
10+1.51 EUR
100+1.06 EUR
500+0.97 EUR
1000+0.85 EUR
2500+0.83 EUR
5000+0.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NCP5109BDR2G onsemi

Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 200 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 85ns, 35ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.3V, Current - Peak Output (Source, Sink): 250mA, 500mA, DigiKey Programmable: Not Verified.

Weitere Produktangebote NCP5109BDR2G nach Preis ab 0.91 EUR bis 3.13 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NCP5109BDR2G NCP5109BDR2G Hersteller : onsemi ncp5109-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 85ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 1297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+1.95 EUR
25+1.64 EUR
100+1.28 EUR
250+1.11 EUR
500+1.00 EUR
1000+0.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NCP5109BDR2G NCP5109BDR2G Hersteller : ONSEMI ncp5109-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 200V
Output current: -500...250mA
Impulse rise time: 160ns
Pulse fall time: 75ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP5109BDR2G NCP5109BDR2G Hersteller : onsemi ncp5109-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 85ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP5109BDR2G NCP5109BDR2G Hersteller : ONSEMI ncp5109-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 200V
Output current: -500...250mA
Impulse rise time: 160ns
Pulse fall time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH