NCP51152BADR2G onsemi
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.32 EUR |
| 10+ | 3.88 EUR |
| 100+ | 2.93 EUR |
| 250+ | 2.57 EUR |
| 500+ | 2.49 EUR |
| 1000+ | 1.99 EUR |
| 2500+ | 1.92 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
199-203 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details NCP51152BADR2G onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C, Current - Peak Output: 4.5A, 9A, Technology: Capacitive Coupling, Current - Output High, Low: 4.5A, 9A, Voltage - Isolation: 3750Vrms, Approval Agency: CQC, UL, VDE, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 12ns, 8.3ns, Common Mode Transient Immunity (Min): 200kV/µs, Propagation Delay tpLH / tpHL (Max): 55ns, 55ns, Pulse Width Distortion (Max): 5ns, Number of Channels: 1, Voltage - Output Supply: 9.5V ~ 30V.
Weitere Produktangebote NCP51152BADR2G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
NCP51152BADR2G | onsemi |
 Description: ISOLATED SINGLE CHANNEL GATE DRIPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 4.5A, 9A Technology: Capacitive Coupling Current - Output High, Low: 4.5A, 9A Voltage - Isolation: 3750Vrms Approval Agency: CQC, UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 8.3ns Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Pulse Width Distortion (Max): 5ns Number of Channels: 1 Voltage - Output Supply: 9.5V ~ 30V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
NCP51152BADR2G | onsemi |
Description: ISOLATED SINGLE CHANNEL GATE DRI Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 4.5A, 9A Technology: Capacitive Coupling Current - Output High, Low: 4.5A, 9A Voltage - Isolation: 3750Vrms Approval Agency: CQC, UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 8.3ns Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Pulse Width Distortion (Max): 5ns Number of Channels: 1 Voltage - Output Supply: 9.5V ~ 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCP51152BADR2G | ON Semiconductor |
Isolated Single Channel Gate Driver |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCP51152BADR2G |
|
Hersteller: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
Description: ISOLATED SINGLE CHANNEL GATE DRI
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP51152BADR2G |
|
Hersteller: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
Description: ISOLATED SINGLE CHANNEL GATE DRI
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP51152BADR2G |
|
Hersteller: ON Semiconductor
Isolated Single Channel Gate Driver
Isolated Single Channel Gate Driver
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH