NCP51152BADR2G onsemi
| Anzahl | Preis |
|---|---|
| 1+ | 3.63 EUR |
| 10+ | 3.26 EUR |
| 100+ | 2.46 EUR |
| 250+ | 2.16 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 1.67 EUR |
| 2500+ | 1.61 EUR |
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Technische Details NCP51152BADR2G onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI, Voltage - Output Supply: 9.5V ~ 30V, Number of Channels: 1, Pulse Width Distortion (Max): 5ns, Propagation Delay tpLH / tpHL (Max): 55ns, 55ns, Common Mode Transient Immunity (Min): 200kV/µs, Rise / Fall Time (Typ): 12ns, 8.3ns, Supplier Device Package: 8-SOIC, Approval Agency: CQC, UL, VDE, Voltage - Isolation: 3750Vrms, Current - Output High, Low: 4.5A, 9A, Technology: Capacitive Coupling, Current - Peak Output: 4.5A, 9A, Operating Temperature: -40°C ~ 125°C, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote NCP51152BADR2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
NCP51152BADR2G | onsemi |
Description: ISOLATED SINGLE CHANNEL GATE DRIVoltage - Output Supply: 9.5V ~ 30V Number of Channels: 1 Pulse Width Distortion (Max): 5ns Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Common Mode Transient Immunity (Min): 200kV/µs Rise / Fall Time (Typ): 12ns, 8.3ns Supplier Device Package: 8-SOIC Approval Agency: CQC, UL, VDE Voltage - Isolation: 3750Vrms Current - Output High, Low: 4.5A, 9A Technology: Capacitive Coupling Current - Peak Output: 4.5A, 9A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
NCP51152BADR2G | onsemi |
Description: ISOLATED SINGLE CHANNEL GATE DRIVoltage - Output Supply: 9.5V ~ 30V Number of Channels: 1 Pulse Width Distortion (Max): 5ns Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Common Mode Transient Immunity (Min): 200kV/µs Rise / Fall Time (Typ): 12ns, 8.3ns Supplier Device Package: 8-SOIC Approval Agency: CQC, UL, VDE Voltage - Isolation: 3750Vrms Current - Output High, Low: 4.5A, 9A Technology: Capacitive Coupling Current - Peak Output: 4.5A, 9A Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCP51152BADR2G |
![]() |
Hersteller: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP51152BADR2G |
![]() |
Hersteller: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: ISOLATED SINGLE CHANNEL GATE DRI
Voltage - Output Supply: 9.5V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 5ns
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Common Mode Transient Immunity (Min): 200kV/µs
Rise / Fall Time (Typ): 12ns, 8.3ns
Supplier Device Package: 8-SOIC
Approval Agency: CQC, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 4.5A, 9A
Technology: Capacitive Coupling
Current - Peak Output: 4.5A, 9A
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


