
NCP81080DR2G ONSEMI

Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Mounting: SMD
Case: SO8
Operating temperature: -40...140°C
Pulse fall time: 17ns
Impulse rise time: 19ns
Type of integrated circuit: driver
Output current: -800...500mA
Supply voltage: 5.5...20V DC
Kind of integrated circuit: gate driver; high-side
Topology: MOSFET half-bridge
Anzahl je Verpackung: 1 Stücke
auf Bestellung 765 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
54+ | 1.33 EUR |
61+ | 1.19 EUR |
67+ | 1.07 EUR |
68+ | 1.06 EUR |
71+ | 1.02 EUR |
100+ | 0.97 EUR |
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Produktbewertung abgeben
Technische Details NCP81080DR2G ONSEMI
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 140°C (TJ), Voltage - Supply: 5.5V ~ 20V, Input Type: TTL, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 19ns, 17ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.2V, 1.8V, Current - Peak Output (Source, Sink): 500mA, 800mA, DigiKey Programmable: Not Verified.
Weitere Produktangebote NCP81080DR2G nach Preis ab 0.97 EUR bis 2.48 EUR
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NCP81080DR2G | Hersteller : ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8 Mounting: SMD Case: SO8 Operating temperature: -40...140°C Pulse fall time: 17ns Impulse rise time: 19ns Type of integrated circuit: driver Output current: -800...500mA Supply voltage: 5.5...20V DC Kind of integrated circuit: gate driver; high-side Topology: MOSFET half-bridge |
auf Bestellung 765 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP81080DR2G | Hersteller : onsemi |
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auf Bestellung 2088 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP81080DR2G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NCP81080DR2G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 5.5V ~ 20V Input Type: TTL Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 19ns, 17ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.8V Current - Peak Output (Source, Sink): 500mA, 800mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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NCP81080DR2G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 5.5V ~ 20V Input Type: TTL Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 19ns, 17ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 1.2V, 1.8V Current - Peak Output (Source, Sink): 500mA, 800mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |