NCV8440ASTT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 59V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 100µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 59 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V
Output Type: N-Channel
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Output Configuration: Low Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Voltage - Load: 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.6A
Ratio - Input:Output: 1:1
Fault Protection: Over Voltage
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.79 EUR |
| 2000+ | 0.73 EUR |
| 3000+ | 0.7 EUR |
| 5000+ | 0.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NCV8440ASTT1G onsemi
Description: MOSFET N-CH 59V 2.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V, Power Dissipation (Max): 1.69W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 100µA, Supplier Device Package: SOT-223 (TO-261), Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 59 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V, Output Type: N-Channel, Number of Outputs: 1, Interface: On/Off, Switch Type: General Purpose, Output Configuration: Low Side, Rds On (Typ): 95mOhm, Input Type: Non-Inverting, Voltage - Load: 52V, Voltage - Supply (Vcc/Vdd): Not Required, Current - Output (Max): 2.6A, Ratio - Input:Output: 1:1, Fault Protection: Over Voltage, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote NCV8440ASTT1G nach Preis ab 0.66 EUR bis 2.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NCV8440ASTT1G | Hersteller : onsemi |
MOSFETs 2.6A, 52V N-CH, CLAM |
auf Bestellung 1352 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NCV8440ASTT1G | Hersteller : onsemi |
Description: MOSFET N-CH 59V 2.6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V Power Dissipation (Max): 1.69W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 100µA Supplier Device Package: SOT-223 (TO-261) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 59 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V Output Type: N-Channel Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Output Configuration: Low Side Rds On (Typ): 95mOhm Input Type: Non-Inverting Voltage - Load: 52V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.6A Ratio - Input:Output: 1:1 Fault Protection: Over Voltage Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 6062 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NCV8440ASTT1G | Hersteller : ONSEMI |
Description: ONSEMI - NCV8440ASTT1G - Leistungs-MOSFET, n-Kanal, 52 V, 2.6 A, 0.11 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 52V rohsCompliant: Y-EX Dauer-Drainstrom Id: 2.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.69W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
NCV8440ASTT1G | Hersteller : ONSEMI |
Description: ONSEMI - NCV8440ASTT1G - Leistungs-MOSFET, n-Kanal, 52 V, 2.6 A, 0.11 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 52V rohsCompliant: Y-EX Dauer-Drainstrom Id: 2.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.69W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
NCV8440ASTT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 59V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
NCV8440ASTT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 59V 2.6A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
|
NCV8440ASTT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 59V 2.6A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
| NCV8440ASTT1G | Hersteller : ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223 Mounting: SMD Case: SOT223 On-state resistance: 0.18Ω Kind of package: reel; tape Gate-source voltage: ±15V Drain-source voltage: 52V Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.5nC Power dissipation: 1.69W Drain current: 2.6A Pulsed drain current: 10A |
Produkt ist nicht verfügbar |


