NCV8440ASTT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 59V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V
Voltage - Load: 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.6A
Power Dissipation (Max): 1.69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 100µA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223 (TO-261)
Fault Protection: Over Voltage
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 59 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V
Qualification: AEC-Q100
| Anzahl | Preis |
|---|---|
| 1000+ | 0.78 EUR |
| 2000+ | 0.72 EUR |
| 3000+ | 0.69 EUR |
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Technische Details NCV8440ASTT1G onsemi
Description: MOSFET N-CH 59V 2.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Output Type: N-Channel, Mounting Type: Surface Mount, Number of Outputs: 1, Interface: On/Off, Switch Type: General Purpose, Operating Temperature: -55°C ~ 150°C (TJ), Output Configuration: Low Side, Rds On (Typ): 95mOhm, Input Type: Non-Inverting, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V, Voltage - Load: 52V, Voltage - Supply (Vcc/Vdd): Not Required, Current - Output (Max): 2.6A, Power Dissipation (Max): 1.69W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 100µA, Ratio - Input:Output: 1:1, Supplier Device Package: SOT-223 (TO-261), Fault Protection: Over Voltage, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 59 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V, Qualification: AEC-Q100.
Weitere Produktangebote NCV8440ASTT1G nach Preis ab 0.66 EUR bis 2.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NCV8440ASTT1G | onsemi |
MOSFETs 2.6A, 52V N-CH, CLAM |
auf Bestellung 1352 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8440ASTT1G | onsemi |
Description: MOSFET N-CH 59V 2.6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 95mOhm Input Type: Non-Inverting Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V Voltage - Load: 52V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.6A Power Dissipation (Max): 1.69W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 100µA Ratio - Input:Output: 1:1 Supplier Device Package: SOT-223 (TO-261) Fault Protection: Over Voltage Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 59 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V Qualification: AEC-Q100 |
auf Bestellung 4362 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8440ASTT1G | ONSEMI |
Description: ONSEMI - NCV8440ASTT1G - Leistungs-MOSFET, n-Kanal, 52 V, 2.6 A, 0.11 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 52V rohsCompliant: Y-EX Dauer-Drainstrom Id: 2.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.69W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NCV8440ASTT1G | ONSEMI |
Description: ONSEMI - NCV8440ASTT1G - Leistungs-MOSFET, n-Kanal, 52 V, 2.6 A, 0.11 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 52V rohsCompliant: Y-EX Dauer-Drainstrom Id: 2.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1.69W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NCV8440ASTT1G |
![]() |
Hersteller: onsemi
MOSFETs 2.6A, 52V N-CH, CLAM
MOSFETs 2.6A, 52V N-CH, CLAM
auf Bestellung 1352 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.13 EUR |
| 10+ | 1.44 EUR |
| 100+ | 1.1 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.76 EUR |
| 2000+ | 0.66 EUR |
| NCV8440ASTT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 59V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V
Voltage - Load: 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.6A
Power Dissipation (Max): 1.69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 100µA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223 (TO-261)
Fault Protection: Over Voltage
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 59 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V
Qualification: AEC-Q100
Description: MOSFET N-CH 59V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 95mOhm
Input Type: Non-Inverting
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V
Voltage - Load: 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.6A
Power Dissipation (Max): 1.69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 100µA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-223 (TO-261)
Fault Protection: Over Voltage
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 59 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V
Qualification: AEC-Q100
auf Bestellung 4362 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
| 11+ | 1.61 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.85 EUR |
| NCV8440ASTT1G |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - NCV8440ASTT1G - Leistungs-MOSFET, n-Kanal, 52 V, 2.6 A, 0.11 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 52V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 2.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.69W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.11ohm
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - NCV8440ASTT1G - Leistungs-MOSFET, n-Kanal, 52 V, 2.6 A, 0.11 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 52V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 2.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.69W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.11ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| NCV8440ASTT1G |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - NCV8440ASTT1G - Leistungs-MOSFET, n-Kanal, 52 V, 2.6 A, 0.11 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 52V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 2.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.69W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.11ohm
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - NCV8440ASTT1G - Leistungs-MOSFET, n-Kanal, 52 V, 2.6 A, 0.11 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 52V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 2.6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 1.69W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.11ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH


