ND260N08KHPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 800V 260A PB50ND-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 260A
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 800 V
Description: DIODE GP 800V 260A PB50ND-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 260A
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 800 V
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Technische Details ND260N08KHPSA1 Infineon Technologies
Description: DIODE GP 800V 260A PB50ND-1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 260A, Supplier Device Package: BG-PB50ND-1, Operating Temperature - Junction: 150°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A, Current - Reverse Leakage @ Vr: 30 mA @ 800 V.